Stannic　oxide　(SOn(2))　nanowires　have　been　prepared　by　Chemical　vapor　deposition　(CVD).　The　low-temperature　transport　properties　of　a　single　SnO2　nanowire　have　been　studied.　It　is　found　that　the　transport　of　the　electrons　in　the　nanowires　is　dominated　by　the　Efros-Shklovskii　variable-range　hopping　(ES-VRH)　process　due　to　the　enhanced　Coulomb　interaction　in　this　semiconducting　nanowire.　The　temperature　dependence　of　the　resistance　follows　the　relation　InR　similar　to　T-1/2.　On　the　I-V　and　dI/dV　curves　of　the　nanowire　a　Coulomb　gap-like　structure　at　low　temperatures　appears.　(C)　2004　Elsevier　Ltd.　All　rights　reserved.