Abstract:
硅通孔(TSV)技术作为实现3D封装中芯片堆叠和硅转接板互联的关键而被广泛关注。本文研究了在温度载荷作用下TSV转接板上铜和硅的应力状态,给出了转接板上铜和硅的应力解析解,并讨论了孔距对转接板应力的影响。
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Year: 2012
Language: Chinese
Cited Count:
WoS CC Cited Count: 0
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ESI Highly Cited Papers on the List: 0 Unfold All
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30 Days PV: 17
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