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Author:

Guan, B. L. (Guan, B. L..) | Ren, X. J. (Ren, X. J..) | Li, S. (Li, S..) | Shi, G. Z. (Shi, G. Z..) | Guo, X. (Guo, X..)

Indexed by:

CPCI-S

Abstract:

Based on the band gap theory, a dual-wavelength VCSELs with same direction, equal-intensity, high-Q program is presented. The wavelengths of the VCSEL can be located with the aid of the Al0.8Ga0.2As defect layer in 1D photonic crystal structure. The results indicated that one-dimensional PC with a sheet of defect layer provides a parent structure on which laser beam can be well engineered without the expense of the macroscopic structural integrity.

Keyword:

VCSEL Photonic Crystal Dual-wavelength

Author Community:

  • [ 1 ] [Guan, B. L.]Beijing Univ Technol, Optoelect Devices Res Lab, Beijing 100124, Peoples R China
  • [ 2 ] [Ren, X. J.]Beijing Univ Technol, Optoelect Devices Res Lab, Beijing 100124, Peoples R China
  • [ 3 ] [Li, S.]Beijing Univ Technol, Optoelect Devices Res Lab, Beijing 100124, Peoples R China
  • [ 4 ] [Shi, G. Z.]Beijing Univ Technol, Optoelect Devices Res Lab, Beijing 100124, Peoples R China
  • [ 5 ] [Guo, X.]Beijing Univ Technol, Optoelect Devices Res Lab, Beijing 100124, Peoples R China

Reprint Author's Address:

  • [Guan, B. L.]Beijing Univ Technol, Optoelect Devices Res Lab, Beijing 100124, Peoples R China

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Source :

VERTICAL-CAVITY SURFACE-EMITTING LASERS XV

ISSN: 0277-786X

Year: 2011

Volume: 7952

Language: English

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 8

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