C(60)　thin　films　were　deposited　on　Si　substrate　by　thermal　evaporation　method　with　the　various　heating　source　temperatures.　The　films　thickness　were　measured　using　dektak　150　surface　profiler　and　the　depositing　rate　of　films　were　obtained.　The　microstructure　properties　of　the　films　were　studied　using　low　angle　X-ray　diffraction　(LA-XRD)　technique.　Their　surface　morphology　and　root　mean　square　(RMS)　were　investigated　using　atomic　force　microscope　(AFM).　A　predominating　texture　component　C(60)　thin　film　with　a　strong　indication　of　(333)　orientation　peak　is　extracted　from　the　studying　of　LA-XRD　measurements　with　information　11.6nm　of　the　average　grain　size　of　C(60)　thin　film　grown　on　Si　under　450　degrees　C　heating　source.　It　is　clearly　shown　that　smooth,　continuous　and　uniform　C(60)　thin　films　which　have　less　holes　and　smaller　RMS　were　prepared　at　450　degrees　C　for　heating　source　by　analysis　of　the　AFM　image.　A　process　preparing　good　C(60)　thin　film　was　obtained　which　was　in　favor　of　fabricating　C(60)-based　organic　solar　cells,　and　it　played　an　important　role　in　improving　its　photoelectric　conversion　efficiency.