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Author:

孙英华 (孙英华.) | 李志国 (李志国.) | 邓燕 (邓燕.) | 程尧海 (程尧海.) | 郭伟玲 (郭伟玲.)

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CQVIP CSCD

Abstract:

采用电流斜坡法测试了4种不同金属化样品,其n值分别为:2.29(Al-Si合金膜),1.25(Al-Si-Cu合金膜),1.28(Al-Si/Ti双层金属化),1.23(Al/TiWTi/Al多层金属化).结果表明,n值与材料有关,电迁徙阻力越高n值越小,与BLACK方程相符。同时,考察了不同温度和不同电流上升斜率对n值测量结果的影响,试验表明,在相当宽的温度范围和测试时间内获得的n值一致性很好。

Keyword:

半导体器件 电迁徙 可靠性

Author Community:

  • [ 1 ] 北京工业大学电子工程学系

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Source :

北京工业大学学报

Year: 1996

Issue: 04

Page: 31-36

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 8

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