Abstract:
<正> 用蒸发方法制备非晶硅薄膜,具有制备方法简单,淀积速率快,实验周期短,成本低等特点.但也存在一些问题,主要是用蒸发方法制备的非晶硅薄膜含有大量的宏观缺陷,如孔洞等.这样使非晶硅薄膜具有高密度的局域态,给掺杂带来很大困难.我们用蒸发方法制备非晶硅的研究是初步的,测试的数据还不完善.
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贵金属
Year: 1981
Issue: 04
Page: 71-72
Cited Count:
WoS CC Cited Count: 0
SCOPUS Cited Count:
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 5
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