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Author:

Wang Zi-xu (Wang Zi-xu.) | Yang Wei-ming (Yang Wei-ming.) | Peng Ju-hong (Peng Ju-hong.) | Chen Jian-xin (Chen Jian-xin.) | Me Wan-bo (Me Wan-bo.) | Shi Chen (Shi Chen.)

Indexed by:

CPCI-S EI Scopus

Abstract:

A balanced-broadband low noise amplifier (LNA) was designed with the FR4 substrate, using packaged SiGe HBTs BFP640 and chip type passive components. The design principle and technology features of the structure of the balanced LNA were described. The computer simulated results indicate that this SiGe balanced LNA has the advantages of the noise figure less than 0.9dB over 0.8GHz to 1.7 GHz range, the high gain of 37dB, the input and output reflected coefficients are all less than -50dB.

Keyword:

broadband SiGeHBT low noise amplifier

Author Community:

  • [ 1 ] [Wang Zi-xu]Hubei Univ, Sch Phys & Elect Technol, Key Lab Ferroelect & Piezoelect Mat & Device Hube, Wuhan 430062, Peoples R China
  • [ 2 ] [Yang Wei-ming]Hubei Univ, Sch Phys & Elect Technol, Key Lab Ferroelect & Piezoelect Mat & Device Hube, Wuhan 430062, Peoples R China
  • [ 3 ] [Peng Ju-hong]Hubei Univ, Sch Phys & Elect Technol, Key Lab Ferroelect & Piezoelect Mat & Device Hube, Wuhan 430062, Peoples R China
  • [ 4 ] [Chen Jian-xin]Beijing Univ Technol, Beijing Opto Elect Technol Lab, Beijing 100022, Peoples R China
  • [ 5 ] [Me Wan-bo]Beijing Univ Technol, Beijing Opto Elect Technol Lab, Beijing 100022, Peoples R China
  • [ 6 ] [Shi Chen]Beijing Univ Technol, Beijing Opto Elect Technol Lab, Beijing 100022, Peoples R China

Reprint Author's Address:

  • [Wang Zi-xu]Hubei Univ, Sch Phys & Elect Technol, Key Lab Ferroelect & Piezoelect Mat & Device Hube, Wuhan 430062, Peoples R China

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Source :

2008 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY PROCEEDINGS, VOLS 1-4

Year: 2008

Page: 233-,

Language: English

Cited Count:

WoS CC Cited Count: 1

SCOPUS Cited Count: 7

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 11

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