• Complex
  • Title
  • Keyword
  • Abstract
  • Scholars
  • Journal
  • ISSN
  • Conference
搜索

Author:

Yang, Qian (Yang, Qian.) | Zhu, Mankang (Zhu, Mankang.) | Wei, Qiumei (Wei, Qiumei.) | Zhang, Manlin (Zhang, Manlin.) | Zheng, Mupeng (Zheng, Mupeng.) | Hou, Yudong (Hou, Yudong.) (Scholars:侯育冬)

Indexed by:

EI Scopus SCIE

Abstract:

In this work, an outstanding recoverable energy density (2.88 J/cm(3)) was achieved under a low field of 150 kV/ cm by introducing 4.0 mol.% NaTaO3(NT) into 0.76 K0.5Bi0.5TiO3-0.24BiFeO(3) (abbreviating as 4NT), which is fabricated by the conventional solid oxide reaction route. Introduction of NT enhances the relaxor behavior, and favors the temperature insensitivity of energy storage performance. Furthermore, the polarization contribution coming from the remanent ferroelectric order makes the 4NT sample show excellent recoverable energy density. Our findings provide the promising perspective of K0.5Bi0.5TiO3-based ceramics in dielectric energy storage application.

Keyword:

Low electric field Relaxor ferroelectric K0.5Bi0.5TiO3 Energy storage density

Author Community:

  • [ 1 ] [Yang, Qian]Beijing Univ Technol, Fac Mat & Mfg, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China
  • [ 2 ] [Zhu, Mankang]Beijing Univ Technol, Fac Mat & Mfg, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China
  • [ 3 ] [Wei, Qiumei]Beijing Univ Technol, Fac Mat & Mfg, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China
  • [ 4 ] [Zhang, Manlin]Beijing Univ Technol, Fac Mat & Mfg, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China
  • [ 5 ] [Zheng, Mupeng]Beijing Univ Technol, Fac Mat & Mfg, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China
  • [ 6 ] [Hou, Yudong]Beijing Univ Technol, Fac Mat & Mfg, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China

Reprint Author's Address:

  • [Zhu, Mankang]Beijing Univ Technol, Fac Mat & Mfg, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China

Show more details

Related Keywords:

Source :

CHEMICAL ENGINEERING JOURNAL

ISSN: 1385-8947

Year: 2021

Volume: 414

1 5 . 1 0 0

JCR@2022

ESI Discipline: ENGINEERING;

ESI HC Threshold:87

JCR Journal Grade:1

Cited Count:

WoS CC Cited Count: 53

SCOPUS Cited Count: 55

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

Online/Total:671/10672257
Address:BJUT Library(100 Pingleyuan,Chaoyang District,Beijing 100124, China Post Code:100124) Contact Us:010-67392185
Copyright:BJUT Library Technical Support:Beijing Aegean Software Co., Ltd.