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Author:

Li, Xufeng (Li, Xufeng.) | Lin, Jian (Lin, Jian.) | Xia, Zhidong (Xia, Zhidong.) | Zhang, Yongqiang (Zhang, Yongqiang.) | Fu, Hanguang (Fu, Hanguang.) (Scholars:符寒光)

Indexed by:

Scopus SCIE

Abstract:

Wire-arc additive manufacturing (WAAM) has been considered as one of the potential additive-manufacturing technologies to fabricate large components. However, its industrial application is still limited by the existence of stress and distortion. During the process of WAAM, the scanning pattern has an important influence on the temperature field, distortion and final quality of the part. Four kinds of deposition patterns, including sequence, symmetry, in-out and out-in, were designed to deposit H13 steel in this study. An in situ measurement system was set up to record the temperature history and the progress of accumulated distortion of the parts during deposition. An S value was proposed to evaluate the distortion of the substrate. It was shown that the distortion of the part deposited by sequence was significantly larger than those of other parts. The distortion deposited by the out-in pattern decreased by 68.6% compared with sequence. The inherent strain method and strain parameter were introduced to expose the mechanism of distortion reduction caused by pattern variation.

Keyword:

wire-arc additive manufacturing in situ measurement path optimization thermal distortion

Author Community:

  • [ 1 ] [Li, Xufeng]Beijing Univ Technol, Fac Mat & Mfg, Beijing 100124, Peoples R China
  • [ 2 ] [Lin, Jian]Beijing Univ Technol, Fac Mat & Mfg, Beijing 100124, Peoples R China
  • [ 3 ] [Xia, Zhidong]Beijing Univ Technol, Fac Mat & Mfg, Beijing 100124, Peoples R China
  • [ 4 ] [Fu, Hanguang]Beijing Univ Technol, Fac Mat & Mfg, Beijing 100124, Peoples R China
  • [ 5 ] [Zhang, Yongqiang]Shougang Res Inst Technol, Beijing 100043, Peoples R China

Reprint Author's Address:

  • [Lin, Jian]Beijing Univ Technol, Fac Mat & Mfg, Beijing 100124, Peoples R China

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Related Keywords:

Source :

METALS

Year: 2021

Issue: 3

Volume: 11

2 . 9 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:116

JCR Journal Grade:2

Cited Count:

WoS CC Cited Count: 14

SCOPUS Cited Count: 17

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 4

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