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Author:

Cui, Boyao (Cui, Boyao.) | Xing, Yanhui (Xing, Yanhui.) | Han, Jun (Han, Jun.) | Lv, Weiming (Lv, Weiming.) | Lv, Wenxing (Lv, Wenxing.) | Lei, Ting (Lei, Ting.) | Zhang, Yao (Zhang, Yao.) | Ma, Haixin (Ma, Haixin.) | Zeng, Zhongming (Zeng, Zhongming.) | Zhang, Baoshun (Zhang, Baoshun.)

Indexed by:

EI Scopus SCIE CSCD

Abstract:

In recent years, low-dimensional materials have received extensive attention in the field of electronics and optoelectronics. Among them, photoelectric devices based on photoconductive effect in low-dimensional materials have a broad development space. In contrast to positive photoconductivity, negative photoconductivity (NPC) refers to a phenomenon that the conductivity decreases under illumination. It has novel application prospects in the field of optoelectronics, memory, and gas detection, etc. In this paper, we review reports about the NPC effect in low-dimensional materials and systematically summarize the mechanisms to form the NPC effect in existing low-dimensional materials.

Keyword:

low-dimensional materials negative photoconductivity optoelectronic devices

Author Community:

  • [ 1 ] [Cui, Boyao]Beijing Univ Technol, Dept Informat, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 2 ] [Xing, Yanhui]Beijing Univ Technol, Dept Informat, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 3 ] [Han, Jun]Beijing Univ Technol, Dept Informat, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 4 ] [Zhang, Yao]Beijing Univ Technol, Dept Informat, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 5 ] [Ma, Haixin]Beijing Univ Technol, Dept Informat, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 6 ] [Cui, Boyao]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Multifunct Nanomat & Smart Syst, Suzhou 215123, Peoples R China
  • [ 7 ] [Lv, Weiming]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Multifunct Nanomat & Smart Syst, Suzhou 215123, Peoples R China
  • [ 8 ] [Lv, Wenxing]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Multifunct Nanomat & Smart Syst, Suzhou 215123, Peoples R China
  • [ 9 ] [Lei, Ting]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Multifunct Nanomat & Smart Syst, Suzhou 215123, Peoples R China
  • [ 10 ] [Zeng, Zhongming]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Multifunct Nanomat & Smart Syst, Suzhou 215123, Peoples R China
  • [ 11 ] [Zhang, Baoshun]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Multifunct Nanomat & Smart Syst, Suzhou 215123, Peoples R China

Reprint Author's Address:

  • [Han, Jun]Beijing Univ Technol, Dept Informat, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China;;[Zeng, Zhongming]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Multifunct Nanomat & Smart Syst, Suzhou 215123, Peoples R China

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Source :

CHINESE PHYSICS B

ISSN: 1674-1056

Year: 2021

Issue: 2

Volume: 30

1 . 7 0 0

JCR@2022

ESI Discipline: PHYSICS;

ESI HC Threshold:72

JCR Journal Grade:3

Cited Count:

WoS CC Cited Count: 31

SCOPUS Cited Count: 34

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 11

Online/Total:1726/10905984
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