Radiation effects of heavy ions on the static and dynamic characteristics of 850 nm high-speed vertical cavity surface emitting lasers - Details

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Abstract：

We　investigate　the　radiation　effects　of　1907　MeV　Ta　ions　on　the　static　and　dynamic　characteristics　of　850　nm　high-speed　vertical　cavity　surface　emitting　lasers　(VCSELs).　The　threshold　current　and　slope　efficiency　are　found　to　be　degraded.　However,　appropriate　ion　fluence　irradiation　can　improve　the　modulation　bandwidth.　The　maximum　3　dB　frequency　is　increased　to　14.02　GHz　from　13　GHz　at　a　fluence　of　1　×　108　ions/cm2.　The　observed　behaviour　can　be　explained　in　terms　of　reflectivity　degradation　of　lossy　distributed-Bragg　reflectors　as　well　as　the　degradation　of　quantum　wells.　©　2021　Elsevier　B.V.

Keyword：

Heavy ions Radiation effects Semiconductor quantum wells Laser pulses Surface emitting lasers Quantum well lasers Reflection Transceivers

Author Community：

[ 1 ] [Shan, Xiaoting]University of Chinese Academy of Sciences, Beijing; 100049, China
[ 2 ] [Shan, Xiaoting]Institute of Microelectronics, Chinese Academy of Sciences, Beijing; 100029, China
[ 3 ] [Li, Bo]Institute of Microelectronics, Chinese Academy of Sciences, Beijing; 100029, China
[ 4 ] [Zhao, Fazhan]Institute of Microelectronics, Chinese Academy of Sciences, Beijing; 100029, China
[ 5 ] [Wang, Lei]Institute of Microelectronics, Chinese Academy of Sciences, Beijing; 100029, China
[ 6 ] [Sun, Yun]Institute of Microelectronics, Chinese Academy of Sciences, Beijing; 100029, China
[ 7 ] [Xun, Meng]Institute of Microelectronics, Chinese Academy of Sciences, Beijing; 100029, China
[ 8 ] [Liu, Jie]Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou; Gansu; 730000, China
[ 9 ] [Gao, Jiantou]Institute of Microelectronics, Chinese Academy of Sciences, Beijing; 100029, China
[ 10 ] [Gu, Rui]University of Chinese Academy of Sciences, Beijing; 100049, China
[ 11 ] [Gu, Rui]Institute of Microelectronics, Chinese Academy of Sciences, Beijing; 100029, China
[ 12 ] [Yang, Chengyue]Institute of Microelectronics, Chinese Academy of Sciences, Beijing; 100029, China
[ 13 ] [Xie, Yiyang]Beijing University of Technology, Beijing; 100124, China
[ 14 ] [Wang, Ju]School of Physics, Peking University, Beijing; 100871, China
[ 15 ] [Wang, Shufeng]School of Physics, Peking University, Beijing; 100871, China
[ 16 ] [Han, Zhengsheng]University of Chinese Academy of Sciences, Beijing; 100049, China
[ 17 ] [Han, Zhengsheng]Institute of Microelectronics, Chinese Academy of Sciences, Beijing; 100029, China
[ 18 ] [Jingtao zhou]Institute of Microelectronics, Chinese Academy of Sciences, Beijing; 100029, China
[ 19 ] [Wu, Dexin]Institute of Microelectronics, Chinese Academy of Sciences, Beijing; 100029, China

Reprint Author's Address：

[sun, yun]institute of microelectronics, chinese academy of sciences, beijing; 100029, china

Email：

sunyun@ime.ac.cn

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Related Keywords：

High Temperature-stable 25 Gbit/s 850 nm Vertical-cavity Surface-emitting Lasers
2019，Chinese Journal of Luminescence
Study on the small signal modulation characteristic of internal-contact oxide-confined vertical-cavity surface-emitting lasers
2009，Chinese Journal of Lasers
A simulation study on single-event burnout in power normally-off AlGaN/GaN HEMT
2019，3rd IEEE International Conference on Electronic Information Technology and Computer Engineering, EITCE 2019
High-speed 850 nm vertical-cavity surface-emitting lasers with BCB planarization technique
2018，Chinese Optics

Source ：

Journal of Luminescence

ISSN： 0022-2313

Year： 2021

Volume： 237

3 . 6 0 0

JCR@2022

ESI Discipline： PHYSICS;

ESI HC Threshold：72

JCR Journal Grade：2

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count： 4

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 5

Affiliated Colleges：

学院待认领

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