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Author:

Zhang, H. (Zhang, H..) | De Luca, F. (De Luca, F..) | Wang, H. (Wang, H..) | Mingard, K. (Mingard, K..) | Gee, M. (Gee, M..)

Indexed by:

EI Scopus SCIE

Abstract:

Nanoindentation was carried out on pure tungsten carbide (WC) on the basal (0001) and prismatic (1010) planes, using Berkovich and spherical indenters, in both single load and multi-load testing. The work focuses on correlating the load-displacement curves, including elastic to plastic deformation, size effect and hysteresis with the deformation behaviour of WC. With different specimen preparation processes, the elastic to plastic deformation started at different threshold loads: This observation was found to be due to the variation in surface dislocation density. Staircase deformation was observed thought to be caused by dislocation motion and the formation of slip bands; sudden displacement discontinuities in the load-displacement response - associated with dislocation loop nucleation - occurred at, or near the theoretical shear strength. Furthermore, discontinuities in load-displacement curves were also used to confirm that hysteresis loops were a result of plastic deformation, as they were absent when the loading was purely elastic.

Keyword:

Surface defects Hysteresis Strength Nanoindentation Pop-ins

Author Community:

  • [ 1 ] [Zhang, H.]Natl Phys Lab, Hampton Rd, Teddington TW11 0LW, Middx, England
  • [ 2 ] [De Luca, F.]Natl Phys Lab, Hampton Rd, Teddington TW11 0LW, Middx, England
  • [ 3 ] [Mingard, K.]Natl Phys Lab, Hampton Rd, Teddington TW11 0LW, Middx, England
  • [ 4 ] [Gee, M.]Natl Phys Lab, Hampton Rd, Teddington TW11 0LW, Middx, England
  • [ 5 ] [Wang, H.]Beijing Univ Technol, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China

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Source :

INTERNATIONAL JOURNAL OF REFRACTORY METALS & HARD MATERIALS

ISSN: 0263-4368

Year: 2022

Volume: 106

3 . 6

JCR@2022

3 . 6 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:66

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 11

SCOPUS Cited Count: 11

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 5

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