In　this　paper,　a　1.2kV　SiC　super-junction　SBD　with　vertical　variation　doping　(VVD-SJ-SBD)　is　proposed　and　investigated　by　Sentaurus　TCAD.　It　is　known　that　the　breakdown　voltage　(BV)　of　conventional　SiC　super　junction　Schottky　diode　(C-SJ-SBD)　is　sensitive　to　the　doping　of　p-type　region　due　to　the　essential　charge　balance　required　in　a　SJ-based　structure,　resulting　in　a　poor　process　tolerance.　The　n-type　epi-layer　of　SiC　VVD-SJ-SBD　proposed　in　this　paper　is　divided　into　three　layers.　The　middle　layer　is　heavily　doped,　and　sandwiched　between　two　lightly　doped　layers.　By　introducing　such　vertical　variation　doping　profile　into　the　epitaxy,　the　SiC　VVD-SJ-SBD　structure　can　reduce　the　sensitivity　of　BV　to　the　doping　concentration　of　p-type　region,　resulting　in　the　improvement　of　the　process　window.　Furthermore,　the　influence　of　parameters　variation　on　BV　of　SiC　VVD-SJ-SBD　is　addressed　as　well.　　©　2022　IEEE.