To　enhance　the　high　voltage　and　high　current　handling　capacity　of　bipolar　charge　plasma　transistor　(BCPT),　a　device　model　of　npn　BCPT　was　established　by　SILVACO　TCAD　for　balancing　high　current　gain　β,　high　breakdown　voltage　of　collector　junction　with　emitter　open　VCBO　and　high　breakdown　voltage　of　collector　and　emitter　with　base　open　VCEO.　Considering　that　the　breakdown　voltage　of　bipolar　transistors　depends　mainly　on　the　doping　concentration　of　the　collector,　the　influence　of　collector　metal　on　the　performance　of　BCPT　was　firstly　studied.　It　is　shown　that　the　collector　electron　concentration　of　BCPT　depends　strongly　on　the　work　function　of　the　electrode　metal.　When　aluminum　(Al)　with　a　larger　work　function　is　adopted　as　the　collector　electrode　metal,　the　concentration　of　electron　plasma　induced　in　the　collector　region　is　reduced　due　to　the　decrease　of　work　function　difference　between　the　metal　and　semiconductor　contact.　As　a　result,　the　peak　electric　field　in　the　space　charge　region　of　the　collector　is　reduced　effectively,　and　the　peak　electron　temperature　and　the　peak　electron　impact　ionization　rate　are　also　reduced,　which　leads　to　the　improvements　of　the　breakdown　voltage　VCBO　and　VCEO.　However,　a　decrease　of　electron　concentration　in　collector　will　cause　the　Kirk　effect　in　base,　which　will　increase　base　recombination　and　lead　to　the　decrease　of　β.　Therefore,　a　structure　of　BCPT　with　substrate　bias　was　proposed,　where　the　positive　substrate　bias　was　adopted　underneath　the　emitter　and　base　to　modulate　the　effective　carrier　concentration　for　increasing　the　efficiency　of　emitter　junction　injection　and　the　β.　Results　show　that　when　compared　with　BCPT　with　zirconium　(Zr)　as　collector　metal,　the　peak　value　of　β　of　the　BCPT　is　improved　by　21.　69%,　and　both　of　the　breakdown　voltage　VCBO　and　VCEO　are　improved　by　12.　78%　and　56.　41%,　respectively,　which　effectively　expands　the　high　power　application　range　of　BCPT.　©　2023　Beijing　University　of　Technology.　All　rights　reserved.