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Author:

Suo, H. (Suo, H..) | Wang, L. (Wang, L..) | Wu, X. (Wu, X..) | Ji, Y. (Ji, Y..) | Wang, X. (Wang, X..) | Ma, L. (Ma, L..) | Liu, M. (Liu, M..) | Wang, Q. (Wang, Q..) | Zhang, Z. (Zhang, Z..)

Indexed by:

EI Scopus SCIE

Abstract:

Multiple factors, such as crystallographic orientation, twins, dislocation, and grain size, significantly affect the tensile properties of alloys; however, it is difficult to identify the dominant factor from only the initial and final conditions. To mitigate this limitation, a combination of in situ tensile technique and electron backscattering diffraction (EBSD) was used to analyze the dominant factors affecting the tensile properties of pure nickel during the stretching process at different annealing temperatures. This process consists of two parts. The first is the analysis of the dominant factor candidate from the initial alloy condition. The second part is the confirmation step that uses the in-situ EBSD tensile technique via real-time analysis of the microstructural transformation during plastic deformation while measuring the tensile properties. Four pure nickel samples with different initial states and mechanical properties were tested in this study. Using EBSD characterization, the distribution of kernel average misorientation gradually concentrates in the regions of accumulated fine grain as the tensile stress proceeds. The grain size of pure nickel was confirmed to be the most significant factor influencing the tensile properties. Our results reveal a feasible evaluation process for the primary effect factor of the tensile properties of pure nickel owing to grain size. © 2023 Elsevier Ltd

Keyword:

Grain size Pure nickel Initial microstructure In-situ EBSD tensile technique Tensile properties

Author Community:

  • [ 1 ] [Suo H.]Key Laboratory of Advanced Functional Materials, Ministry of Education, College of Materials Science and Engineering, Beijing University of Technology, 100 Pingleyuan, Chaoyang District, Beijing, 100124, China
  • [ 2 ] [Wang L.]Key Laboratory of Advanced Functional Materials, Ministry of Education, College of Materials Science and Engineering, Beijing University of Technology, 100 Pingleyuan, Chaoyang District, Beijing, 100124, China
  • [ 3 ] [Wu X.]Key Laboratory of Advanced Functional Materials, Ministry of Education, College of Materials Science and Engineering, Beijing University of Technology, 100 Pingleyuan, Chaoyang District, Beijing, 100124, China
  • [ 4 ] [Ji Y.]Key Laboratory of Advanced Functional Materials, Ministry of Education, College of Materials Science and Engineering, Beijing University of Technology, 100 Pingleyuan, Chaoyang District, Beijing, 100124, China
  • [ 5 ] [Ji Y.]School of Materials Science and Engineering, Liaocheng University, Shandong, Liaocheng, 252059, China
  • [ 6 ] [Wang X.]Key Laboratory of Advanced Functional Materials, Ministry of Education, College of Materials Science and Engineering, Beijing University of Technology, 100 Pingleyuan, Chaoyang District, Beijing, 100124, China
  • [ 7 ] [Ma L.]Key Laboratory of Advanced Functional Materials, Ministry of Education, College of Materials Science and Engineering, Beijing University of Technology, 100 Pingleyuan, Chaoyang District, Beijing, 100124, China
  • [ 8 ] [Liu M.]Key Laboratory of Advanced Functional Materials, Ministry of Education, College of Materials Science and Engineering, Beijing University of Technology, 100 Pingleyuan, Chaoyang District, Beijing, 100124, China
  • [ 9 ] [Wang L.]Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, 100190, China
  • [ 10 ] [Wang Q.]Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, 100190, China
  • [ 11 ] [Wang Q.]University of Chinese Academy of Sciences, Beijing, 100049, China
  • [ 12 ] [Zhang Z.]Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, 100190, China

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Source :

Materials Today Communications

ISSN: 2352-4928

Year: 2023

Volume: 35

3 . 8 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:26

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 6

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 7

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