Abstract:
烧结银因具有高熔点,良好的热导率和电导率,以及可以在较低的温度下烧结等特点,被认为是未来高温碳化硅功率模块封装中最有前景的芯片互连材料点。本文基于内聚力模型对烧结银接头的剪切强度进行了预测,计算出烧结银接头的剪切强度,该方法可为SiC功率模块的可靠性设计提供理论指导。
Keyword:
Reprint Author's Address:
Email:
Source :
Year: 2023
Language: Chinese
Cited Count:
WoS CC Cited Count: 59
SCOPUS Cited Count:
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 10
Affiliated Colleges: