This　review　summarizes　the　operational　principles　of　Indium　Arsenide　(InAs)　nanowire　photodetectors　under　different　light　conditions　and　the　various　approaches　designed　to　optimize　their　performance.　InAs　nanowires　are　highly　regarded　as　potential　candidates　for　the　next　generation　of　optoelectronic　devices,　attributed　to　their　exceptional　optical　and　electrical　characteristics.　However,　the　surface　states　and　defects　of　InAs　nanowires　lead　to　complex　photoresponse　mechanisms　under　different　illumination　conditions　and　greatly　affect　their　performance.　Therefore,　various　approaches　have　been　proposed　to　enhance　their　performance,　including　surface　passivation,　doping,　and　construction　of　heterojunctions,　etc.　This　review　categorizes　these　different　techniques,　discusses　their　respective　advantages　and　limitations,　and　provides　an　outlook　on　future　developments　in　this　field.