The　straight　bandgap,　high　electron　mobility,　and　good　light　absorption　properties　of　gallium　arsenide　(GaAs)　nanowires　(NWs)　make　them　great　candidates　for　infrared　photodetectors.　In　this　study,　we　describe　the　synthesis　of　high-quality　single-crystal　GaAs　NWs　by　solid-source　chemical　vapor　deposition　(SSCVD)　and　evaluate　their　photodetection　performance.　The　prepared　GaAs　NWs　exhibit　excellent　optoelectronic　properties　at　a　wavelength　of　792　nm,　with　a　photoresponsivity(R)　of　3.65　A/W　and　a　detectivity　(D*)　of　3.68×1011　Jones,　as　well　as　excellent　sensitivity　and　reproducibility.　These　findings　emphasize　the　potential　application　of　GaAs　NWs　in　photodetector　technology.　©　2024　SPIE.