Despite　the　widespread　use　of　metal　oxides　as　electron　selective　contacts　(ESCs)　in　dopant-free　passivating　contact　crystalline　silicon　(c-Si)　solar　cells,　their　stability　and　performance　improvements　still　encounter　bottlenecks.　Herein,　we　investigated　the　potential　of　zinc　sulfide　(ZnS)　as　ESC　for　n-type　cSi　(n-Si)　solar　cells.　The　performance　of　the　ZnS-based　dopant-free　n-Si　solar　cells　has　been　optimized　by　deploying　the　low-work-function　Mg/Ag　stack　electrode　and　a　SiOx　passivation　interlayer　with　forming　gas　annealing　(FGA)　treatment.　An　efficiency　of　20.03%　has　been　achieved　for　n-Si　solar　cells　with　SiOx(FGA)/ZnS/Mg/Ag　contact,　which　is　so　far　the　highest　efficiency　reported　for　ZnS-based　c-Si　solar　cells.　Moreover,　the　device　maintained　&　GE;98%　of　its　initial　efficiency　after　being　stored　in　the　air　for　30　days,　indicating　the　promise　of　long-term　deployment.　Our　work　highlights　the　great　potential　of　using　metal　sulfides　as　high-performance　and　stable　passivating　contacts　in　dopant-free　c-Si　solar　cells.　&　COPY;　2023　Elsevier　Ltd.　All　rights　reserved.