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Author：

Liu, D. (Liu, D..) | Wu, W. (Wu, W..) | Lei, H. (Lei, H..) | Zhu, Z. (Zhu, Z..) | Hui, Y. (Hui, Y..) | Li, Q. (Li, Q..)

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Scopus

Abstract：

LD　side　pumped　Er3+,　Yb3+∶glass　waveguide　passively　Q-switched　laser　was　reported.　By　adhesive-free　bonding　techniques,　Co-doped　borosilicate　glass　with　a　thickness　of　0.　1　mm　was　bonded　on　four　sides　of　the　core　(atom　fraction　1%　Er3+,　21%　Yb3+∶glass)　of　waveguide.　The　aim　was　to　block　the　formation　pathway　of　amplified　spontaneous　emission　(ASE)　and　improve　the　output　efficiency　of　laser.　In　order　to　improve　the　pump　uniformity　and　output　beam　quality　of　laser,　K9　borosilicate　optical　glass　was　bonded　on　both　sides　of　waveguide　as　the　transmission　layer　of　pump.　In　free-running　mode,　laser　output　was　obtained　with　the　maximum　pulse　energy　of　34.　7　mJ　and　the　slope　efficiency　of　10.　6%.　In　passively　Q-switched　mode,　a　pulse　laser　was　achieved　with　wavelength　of　1.　535　μm,　single　pulse　energy　of　2.　16　mJ,　pulse　width　of　4.　7　ns,　peak　power　of　459　kW,　and　beam　quality　factor　M2=1.　53.　Experimental　results　demonstrate　that　the　bonding　of　Co2+∶glass　on　the　four　sides　of　Er3+,　Yb3+∶glass　is　an　effective　method　to　inhibit　ASE　effect　and　improve　the　output　pulse　energy　of　laser.　©　2023　Universitat　zu　Koln.　All　rights　reserved.

Keyword：

solid-state laser lasers passively Q-switched waveguide side pumped

Author Community：

  • [ 1 ] [Liu D.]Institute of Laser Engineering, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
  • [ 2 ] [Wu W.]Institute of Laser Engineering, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
  • [ 3 ] [Lei H.]Institute of Laser Engineering, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
  • [ 4 ] [Lei H.]Beijing Engineering Research Center of Laser Technology, Beijing, 100124, China
  • [ 5 ] [Lei H.]Beijing Colleges, Universities Engineering Research Center of Advanced Laser Manufacturing, Beijing, 100124, China
  • [ 6 ] [Lei H.]Key Laboratory of Trans-Scale Laser Manufacturing Technology, Ministry of Education, Beijing, 100124, China
  • [ 7 ] [Zhu Z.]Institute of Laser Engineering, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
  • [ 8 ] [Zhu Z.]Beijing Engineering Research Center of Laser Technology, Beijing, 100124, China
  • [ 9 ] [Zhu Z.]Beijing Colleges, Universities Engineering Research Center of Advanced Laser Manufacturing, Beijing, 100124, China
  • [ 10 ] [Zhu Z.]Key Laboratory of Trans-Scale Laser Manufacturing Technology, Ministry of Education, Beijing, 100124, China
  • [ 11 ] [Hui Y.]Institute of Laser Engineering, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
  • [ 12 ] [Hui Y.]Beijing Engineering Research Center of Laser Technology, Beijing, 100124, China
  • [ 13 ] [Hui Y.]Beijing Colleges, Universities Engineering Research Center of Advanced Laser Manufacturing, Beijing, 100124, China
  • [ 14 ] [Hui Y.]Key Laboratory of Trans-Scale Laser Manufacturing Technology, Ministry of Education, Beijing, 100124, China
  • [ 15 ] [Li Q.]Institute of Laser Engineering, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
  • [ 16 ] [Li Q.]Beijing Engineering Research Center of Laser Technology, Beijing, 100124, China
  • [ 17 ] [Li Q.]Beijing Colleges, Universities Engineering Research Center of Advanced Laser Manufacturing, Beijing, 100124, China
  • [ 18 ] [Li Q.]Key Laboratory of Trans-Scale Laser Manufacturing Technology, Ministry of Education, Beijing, 100124, China

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Source ：

Laser and Optoelectronics Progress

ISSN： 1006-4125

Year： 2023

Issue： 9

Volume： 60

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 8

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