The　MSM　structures　based　on　high-quality　1.6-mu　m-thick　alpha-gallium　oxide　(Ga2O3)　films　grown　by　the　halide　vapor　phase　epitaxy　with　Ti/Ni　interdigital　contacts　were　developed　for　the　detection　of　short-wave　ultraviolet　(UVC)　radiation.　The　spectral　dependences　of　responsivity,　external　quantum　efficiency　(EQE),　and　detectivity　of　MSM　structures　based　on　alpha-Ga2O3　were　studied　in　the　wavelength　range　of　205-260　nm.　The　responsivity,　the　EQE,　and　the　detectivity　are　7.19　x　104　A　x　W-1,　3.79　x　105　arb.un.,　and　1.12　x　1018　Hz(0.5)　x　cm　x　W-1,　respectively,　for　structures　with　an　interelectrode　distance　of　30　mu　m　at　an　applied　voltage　of　10　V　and　exposure　to　radiation　with　a　wavelength　of　235　nm.　The　high　values　of　the　photoelectric　characteristics　were　caused　by　the　manifestation　of　an　internal　gain　of　the　photoresponse　due　to　the　self-localization　of　holes　in　alpha-Ga2O3.　The　prospects　of　researches　to　develop　UVC　radiation　detectors　for　wireless　UVC　communication　were　shown.