Properties of the InGaN: Mg with roughened surface and high hole concentration and its light-emitting diode application - Details

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Abstract：

InGaN:　Mg　films　were　grown　by　metal-organic　chemical　vapor　deposition　(MOCVD),　and　the　properties　of　InGaN:　Mg　the　materials　with　different　source　fluxes　were　studied.　The　optical　and　electrical　properties　show　that　when　epitaxial　growth　temperature　is　at　760°C,　the　TMIn　molar　flux　is　certain,　the　In　molecomposition　increases　with　the　increase　of　CP2Mg　and　III　family　source　molar　ratio([CP2Mg]/[III]),　and　the　hole　concentration　also　increases　linearly.　When　[CP2Mg]/[III]　is　1.12×10-3,　the　high　hole　concentration　of　4.　78×1019　cm-3　is　obtained.　Moreover,　the　electro-luminescence　intensity　of　the　light-emitting　diodes　(LEDs)　with　InGaN:　Mg　as　contact　layer　is　enhanced　by　28%　compared　with　conventional　LEDs.

Keyword：

Diodes Metallorganic chemical vapor deposition Industrial chemicals Light Atomic force microscopy Films Electric properties Fluxes Hole concentration Organic chemicals Vapor deposition Epitaxial growth Gallium compounds Organic light emitting diodes (OLED) Luminescence

Author Community：

[ 1 ] [Xing, Yan-Hui]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Han, Jun]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Deng, Jun]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Li, Jian-Jun]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Xu, Chen]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 6 ] [Shen, Guang-Di]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

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xingyanhui@bjut.edu.cn

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Related Keywords：

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Source ：

Journal of Optoelectronics Laser

ISSN： 1005-0086

Year： 2011

Issue： 5

Volume： 22

Page： 666-668,672

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 6

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信息科学技术学院本学院/部未明确归属的数据

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