Surface morphology and electrical properties control of p-InGaN by MOCVD growth temperature to improve LED light power - Details

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Abstract：

InGaN:Mg　films　have　been　grown　by　metal-organic　chemical　vapor　deposition,　the　surface　morphology　and　electrical　properties　of　the　p-InGaN　are　optimised　by　changing　the　epitaxial　growth　temperature.　The　sample　grown　at　800°C　had　a　lower　resistivity　than　the　other　samples,　hole　concentration　of　the　p-InGaN　is　1.9×1019cm-3,　many　knolls　for　roughen　sample　surface　were　observed　by　atomic　force　microscopy,　its　root-mean-　square　is　highest　in　all　samples.　The　optical　power　of　the　LED　with　roughened　surface　and　optimal　electrical　properties　of　p-InGaN　contact　layer　was　improved　23%.

Keyword：

Metallorganic chemical vapor deposition Surface morphology Atomic force microscopy Hole concentration Electric properties Morphology Growth temperature Organic chemicals Vapor deposition Epitaxial growth Light emitting diodes Organometallics Surface properties Gallium compounds Epitaxial films X ray diffraction

Author Community：

[ 1 ] [Han, Jun]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Xing, Yan-Hui]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Deng, Jun]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Zhu, Yan-Xu]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Xu, Chen]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 6 ] [Shen, Guang-Di]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

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Related Keywords：

Properties of the InGaN: Mg with roughened surface and high hole concentration and its light-emitting diode application
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Source ：

Journal of Functional Materials

ISSN： 1001-9731

Year： 2011

Issue： 7

Volume： 42

Page： 1227-1229

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 8

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信息科学技术学院本学院/部未明确归属的数据

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