Photodetectors　based　on　two-dimensional　materials　have　attracted　much　attention　because　of　their　unique　structure　and　outstanding　performance.　The　response　speed　of　single　ReS2　photodetector　is　slow　exceptionally,　the　heterostructure　could　improves　the　response　speed　of　ReS2-based　photodetector,　but　the　photodetectors　responsivity　is　reduced　greatly,　which　restricts　the　development　of　ReS2.　In　this　paper,　a　vertically　structured　ReS2/SnS2　van　der　Waals　heterostructure　photodetectors　is　prepared,　using　ReS2　as　the　transport　layer　and　SnS2　as　the　light　absorbing　layer　to　regulate　the　channel　current.　The　device　has　an　ultra-high　photoconductive　gain　of　10(10),　which　exhibits　an　ultra-high　responsivity　of　4706　A/W　under　365-nm　illumination　and　response　speed　in　seconds,　and　has　an　ultra-high　external　quantum　efficiency　of　1.602x10(6)　%　and　a　high　detectivity　of　5.29x10(12)　jones.　The　study　for　ReS2-based　photodetector　displays　great　potential　for　developing　future　optoelectronic　devices.