With　the　advantages　of　small　size,　high　power　density　and　low　cost,　the　reverse-conducting　IGBT　(RC-IGBT)　has　attracted　wide　attention　and　research　interest.　We　review　the　development　of　RC-IGBT　technology,　and　focus　on　high-voltage　devices　which　is　suitable　for　power　grid　applications.　The　content　includes　the　primitive　structure　and　operating　principle,　snapback　problem　solving,　back-side　doping　optimization,　and　diode　performance　optimization.　On　the　basis　of　the　pilot　IGBT　structure,　we　further　discuss　the　power　optimization,　turn-off　softness,　short　circuit　robustness,　diode　surge　current,　temperature　characteristics,　and　other　potential　performance　advantages　of　RC-IGBTs.　A　series　of　technological　advances　are　expected　to　enable　us　to　take　full　advantage　of　its　performance　in　a　wide　range　of　applications　including　power　grid　applications.　©　2018,　High　Voltage　Engineering　Editorial　Department　of　CEPRI.　All　right　reserved.