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Author:

Li, Bao-Zhi (Li, Bao-Zhi.) | Zou, Yong-Gang (Zou, Yong-Gang.) | Wang, Xiao-Long (Wang, Xiao-Long.) | Pei, Li-Na (Pei, Li-Na.) | Shi, Lin-Lin (Shi, Lin-Lin.) | Li, Peng-Tao (Li, Peng-Tao.) | Guan, Bao-Lu (Guan, Bao-Lu.)

Indexed by:

EI Scopus PKU CSCD

Abstract:

In order to increase the wavelength tuning range of the tunable laser and improve the reliability and stability of the system, a wavelength tunable vertical cavity surface emitting laser with a central wavelength of 852 nm was designed based on the characteristics of electrically controlled birefringence of liquid crystal. The physical principle that the structure obtained a wide range of wavelength tuning and single polarization stable output was analyzed, and the reflection spectra corresponding to the thickness of different liquid crystal layers under the whole device were further calculated by the transfer matrix method, the lasing wavelength of laser with different thickness and refractive index of liquid crystal was obtained. The results show that the tuning range of the liquid crystal tunable laser with single polarization reaches 31 nm and the tuning efficiency is more than 10 nm/V. © 2018, Science Press. All right reserved.

Keyword:

Transfer matrix method Fiber optic sensors Laser tuning Polarization Laser theory Liquid crystals Refractive index Semiconductor lasers Liquid lasers Laser pulses Surface emitting lasers System stability Crystal structure Lasers

Author Community:

  • [ 1 ] [Li, Bao-Zhi]State Key Laboratory of High-power Semiconductor Lasers, Changchun University of Science and Technology, Changchun; 130022, China
  • [ 2 ] [Li, Bao-Zhi]Key Laboratory of Opto-electronics, Ministry of Education, Beijing University of Technology, Beijing; 100124, China
  • [ 3 ] [Zou, Yong-Gang]State Key Laboratory of High-power Semiconductor Lasers, Changchun University of Science and Technology, Changchun; 130022, China
  • [ 4 ] [Wang, Xiao-Long]State Key Laboratory of High-power Semiconductor Lasers, Changchun University of Science and Technology, Changchun; 130022, China
  • [ 5 ] [Pei, Li-Na]State Key Laboratory of High-power Semiconductor Lasers, Changchun University of Science and Technology, Changchun; 130022, China
  • [ 6 ] [Shi, Lin-Lin]State Key Laboratory of High-power Semiconductor Lasers, Changchun University of Science and Technology, Changchun; 130022, China
  • [ 7 ] [Li, Peng-Tao]Key Laboratory of Opto-electronics, Ministry of Education, Beijing University of Technology, Beijing; 100124, China
  • [ 8 ] [Guan, Bao-Lu]Key Laboratory of Opto-electronics, Ministry of Education, Beijing University of Technology, Beijing; 100124, China

Reprint Author's Address:

  • [shi, lin-lin]state key laboratory of high-power semiconductor lasers, changchun university of science and technology, changchun; 130022, china

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Source :

Chinese Journal of Luminescence

ISSN: 1000-7032

Year: 2018

Issue: 11

Volume: 39

Page: 1621-1626

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 2

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 5

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