By　introducing　the　proton　implantation(PI)　process　in　the　photonic　crystal(PhC)　vertical-cavity　surface-emitting　lasers　(VCSEL)　fabrication　to　confine　the　injection　current　in　the　devices　can　make　the　mesa　process　become　pure　plane　technology.　It　reduced　the　fabrication　difficult　of　the　photonic　crystal　structure,　simplified　the　fabrication　processes,　and　improved　the　L-I-V　characteristics　uniformity　of　the　devices.　In　the　PI-PhC-VCSEL,　the　photonic　crystal　structure　can　control　light　beam　and　mode　characteristics　of　the　devices,　when　the　current　injection　hole　diameter　is　less　than　the　center　defect　diameter　of　the　photonic　crystal.　This　effect　in　the　PI-PhC-VCSEL　can　be　used　to　optimize　the　threshold　current　and　enhance　the　performance　of　the　devices;　it　also　can　be　used　to　realize　high　output　power　low　threshold　current　single　fundamental　mode　PI-PhC-VCSELs.　A　device　with　threshold　current　of　2.1　mA,　output　power　larger　than　1　mW,　the　divergence　angle　less　than　7°was　designed　and　produced.　The　device　can　operate　with　single　fundamental　mode　with　the　injection　current　less　than　12.5　mA　and　the　effect　of　the　photonic　crystal　in　the　PI-VCSEL　has　been　demonstrated.　©　2016,　Editorial　Board　of　Journal　of　Infrared　and　Laser　Engineering.　All　right　reserved.