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Author:

Hu, S. (Hu, S..) | Qin, Y. (Qin, Y..) | Lu, S. (Lu, S..) | Guo, L. (Guo, L..) | Gu, X. (Gu, X..) | Yang, T. (Yang, T..) | Zhang, R. (Zhang, R..) | Meng, K. (Meng, K..) | Zhang, C. (Zhang, C..) | Wu, M. (Wu, M..) | Sun, X. (Sun, X..)

Indexed by:

EI Scopus SCIE

Abstract:

Molecular semiconductors (MSCs) are known as ideal candidates for constructing room-temperature spin-charge interactive devices due to their long spin lifetimes and abundant photoelectric properties. These devices can achieve novel and valuable functionalities such as room-temperature supply units of fully spin-polarized current. Unfortunately, their performances (sub-0.1 nA) remain unsatisfactory due to limited charge and spin injection efficiency, which can hardly be improved despite great efforts thus far. Herein, from the theoretical side, an interfacial tunnel layer with precisely-controlled barrier in spintronic devices may simultaneously enhance spin and charge injection. Accordingly, a solution-processed small molecule with smooth morphology and amorphous structure is introduced to form a uniform and well-controllable barrier in molecular spin-photovoltaic devices. By modulating the thickness to effectively control the barrier, both spin and charge injection efficiency increase by > 150%. Thus, the spin-charge interactive functionalities as supply units of fully spin-polarized current have also been significantly improved than the current record at room temperature, the output fully spin-polarized current (>2 nA) is 1200%-larger, and the output power increases by > 50 times. Moreover, the interface-modified spintronic devices exhibit excellent stability even after 70 days of exposure to air, which is essential for practical applications in the future. © 2024 Wiley-VCH GmbH.

Keyword:

air stability interface engineering spin-charge interactive functionality spin and charge injection molecular spintronics

Author Community:

  • [ 1 ] [Hu S.]Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
  • [ 2 ] [Hu S.]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
  • [ 3 ] [Qin Y.]Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
  • [ 4 ] [Lu S.]School of Material Science and Engineering, Zhengzhou University, Zhengzhou, 450001, China
  • [ 5 ] [Guo L.]Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
  • [ 6 ] [Gu X.]Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
  • [ 7 ] [Yang T.]Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
  • [ 8 ] [Yang T.]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
  • [ 9 ] [Zhang R.]Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
  • [ 10 ] [Zhang R.]Beijing Key Laboratory of Microstructure and Property of Solids, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
  • [ 11 ] [Meng K.]Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
  • [ 12 ] [Meng K.]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
  • [ 13 ] [Zhang C.]Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
  • [ 14 ] [Wu M.]Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
  • [ 15 ] [Sun X.]Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
  • [ 16 ] [Sun X.]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
  • [ 17 ] [Sun X.]School of Material Science and Engineering, Zhengzhou University, Zhengzhou, 450001, China

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Source :

Advanced Functional Materials

ISSN: 1616-301X

Year: 2024

Issue: 23

Volume: 34

1 9 . 0 0 0

JCR@2022

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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