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Author:

Zhang, Hongqiang (Zhang, Hongqiang.) | He, Siliang (He, Siliang.) | Qu, Guanda (Qu, Guanda.) | Deng, Zhongyang (Deng, Zhongyang.) | Zou, Guisheng (Zou, Guisheng.) | Jia, Qiang (Jia, Qiang.) | Deng, Erping (Deng, Erping.) | Guo, Wei (Guo, Wei.)

Indexed by:

EI Scopus SCIE

Abstract:

Ag nanopaste is one of the most promising die-attach materials in power devices. In this work, robust sintered SiC devices are achieved by using graphene reinforced Ag nanopaste to improve the heat dissipation and shear strength. Microstructure, mechanical, and electrical properties of the sintered joints are investigated. The addition graphene can bring exciting performance improvements, and graphene ( © 2011-2012 IEEE.

Keyword:

Silicon carbide Thermal conductivity Reinforcement Graphene Substrates Silver Temperature Sintering

Author Community:

  • [ 1 ] [Zhang, Hongqiang]Beihang University, School of Mechanical Engineering and Automation, Beijing; 100191, China
  • [ 2 ] [He, Siliang]Guilin University of Electronic Technology, Guangxi Key Laboratory of Manufacturing System and Advanced Manufacturing Technology, School of Mechanical and Electrical Engineering, Guilin; 541004, China
  • [ 3 ] [Qu, Guanda]Beihang University, School of Mechanical Engineering and Automation, Beijing; 100191, China
  • [ 4 ] [Deng, Zhongyang]Tsinghua University, Department of Mechanical Engineering, Beijing; 100084, China
  • [ 5 ] [Zou, Guisheng]Tsinghua University, Department of Mechanical Engineering, Beijing; 100084, China
  • [ 6 ] [Jia, Qiang]Beijing University of Technology, Faculty of Materials and Manufacturing, Beijing; 100124, China
  • [ 7 ] [Deng, Erping]North China Electric Power University, State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, Beijing; 102206, China
  • [ 8 ] [Guo, Wei]Beihang University, School of Mechanical Engineering and Automation, Beijing; 100191, China

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Source :

IEEE Transactions on Components, Packaging and Manufacturing Technology

ISSN: 2156-3950

Year: 2024

Issue: 1

Volume: 14

Page: 52-60

2 . 2 0 0

JCR@2022

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 13

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 8

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