Research progress of GaN HEMT device structure - Details

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Abstract：

GaN　high　electron　mobility　transistor　(HEMT)　has　been　widely　acknowledged　for　use　in　high-frequency,　high-power,　and　high-temperature　applications　because　of　their　features　such　as　its　wide　band　gap,　high　electron　saturation　velocity,　high　2-DEG　density　at　the　hetero-interface,　high　breakdown　voltage　(BV),　and　high　thermal　conductivity.　The　issues　that　limit　the　gallium　nitride　high　electron　mobility　transistor　device　performance　improvement　and　some　solutions　are　introduced　firstly.　And　then,　the　latest　research　progress　on　the　high-frequency,　high-power　area　of　gallium　nitride　high　electron　mobility　transistor　is　reviewed　in　detail　with　focus　on　the　material　structural　design　and　the　device　structural　design.　Finally,　the　direction　for　the　development　of　the　device　is　discussed　briefly.　©,　2015,　Chines　Academy　of　Sciences.　All　right　reserved.

Keyword：

Electron mobility Structural design Wide band gap semiconductors Gallium nitride Nitrides Energy gap Transistors High temperature applications III-V semiconductors Electrons High electron mobility transistors Thermal conductivity

Author Community：

[ 1 ] [Yu, Ning]Beijing Optoelectronic Technology Laboratory, College of Electronic Information & Control Engineering, Beijing University of Technology, Beijing; 100124, China
[ 2 ] [Wang, Hong-Hang]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan; 528402, China
[ 3 ] [Liu, Fei-Fei]Beijing Optoelectronic Technology Laboratory, College of Electronic Information & Control Engineering, Beijing University of Technology, Beijing; 100124, China
[ 4 ] [Du, Zhi-Juan]Beijing Optoelectronic Technology Laboratory, College of Electronic Information & Control Engineering, Beijing University of Technology, Beijing; 100124, China
[ 5 ] [Wang, Yue-Hua]Beijing Optoelectronic Technology Laboratory, College of Electronic Information & Control Engineering, Beijing University of Technology, Beijing; 100124, China
[ 6 ] [Song, Hui-Hui]Beijing Optoelectronic Technology Laboratory, College of Electronic Information & Control Engineering, Beijing University of Technology, Beijing; 100124, China
[ 7 ] [Zhu, Yan-Xu]Beijing Optoelectronic Technology Laboratory, College of Electronic Information & Control Engineering, Beijing University of Technology, Beijing; 100124, China
[ 8 ] [Sun, Jie]Beijing Optoelectronic Technology Laboratory, College of Electronic Information & Control Engineering, Beijing University of Technology, Beijing; 100124, China

Reprint Author's Address：

[zhu, yan-xu]beijing optoelectronic technology laboratory, college of electronic information & control engineering, beijing university of technology, beijing; 100124, china

Email：

zhuyx@bjut.edu.cn

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