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Author:

Huang, Shuai (Huang, Shuai.) | Zhu, Liangliang (Zhu, Liangliang.) | Dong, Guifang (Dong, Guifang.) | Liu, Yue (Liu, Yue.) | Chen, Yanzhong (Chen, Yanzhong.) | Li, Jing (Li, Jing.) | Zhang, Xinping (Zhang, Xinping.) | Li, Ruixuan (Li, Ruixuan.) | Zhang, Guangyin (Zhang, Guangyin.) | Guan, Baolu (Guan, Baolu.)

Indexed by:

EI Scopus SCIE

Abstract:

Metal halide perovskites are considered as a prospective candidate as optical gain media for stimulated emission, and the advancement of amplified spontaneous emission (ASE) of perovskite materials is gradually becoming the key to realize the commercialization of perovskite lasers. Nonetheless, the ASE of solution-processed polycrystalline perovskite films still experiences a high threshold and poor optical stability due to their high defect density and poor crystalline quality. In this scenario, a noticeably ameliorated ASE performance with decreased threshold and greater photo-stability is demonstrated in solution-processed (FAPbI(3))(0.85)(MAPbBr(3))(0.15) polycrystalline perovskite films by introducing a neoteric 4 '-Aminoacetophenone hydrochloride (APCl) additive with cost-effective fabrication. The ASE threshold of the APCl-embedded perovskite films is prominently curtailed from 12.8 to 5.3 mu J cm(-2), with an augmented optical gain, ASE output intensity, and optical durability. The ameliorated ASE performance can be credited to multifunctional effects of the APCl additive in the perovskite films, presenting a low defect density, an unambiguously elevated photoluminescence, a prolonged decay lifetime and thus enabling the easily achieved population inversion caused by the attenuated nonradiative carrier recombination in the optical gain media. These findings provide a significant foundation and pave the way for realizing the electrically excited lasing based on the perovskite materials.

Keyword:

optical durability 4 '-Aminoacetophenone hydrochloride perovskite films threshold amplified spontaneous emission

Author Community:

  • [ 1 ] [Huang, Shuai]Beijing Univ Technol, Coll Elect Sci & Technol, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 2 ] [Zhu, Liangliang]Beijing Univ Technol, Coll Elect Sci & Technol, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 3 ] [Guan, Baolu]Beijing Univ Technol, Coll Elect Sci & Technol, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 4 ] [Dong, Guifang]Tsinghua Univ, Dept Chem, Key Lab Organ Optoelect & Mol Engn, Minist Educ, Beijing 100084, Peoples R China
  • [ 5 ] [Liu, Yue]Beijing Univ Technol, Inst Informat Photon Technol, Fac Sci, Beijing 100124, Peoples R China
  • [ 6 ] [Zhang, Xinping]Beijing Univ Technol, Inst Informat Photon Technol, Fac Sci, Beijing 100124, Peoples R China
  • [ 7 ] [Chen, Yanzhong]Chinese Acad Sci, Aerosp Informat Res Inst, Beijing 10094, Peoples R China
  • [ 8 ] [Li, Ruixuan]Chinese Acad Sci, Aerosp Informat Res Inst, Beijing 10094, Peoples R China
  • [ 9 ] [Zhang, Guangyin]Chinese Acad Sci, Aerosp Informat Res Inst, Beijing 10094, Peoples R China
  • [ 10 ] [Li, Jing]Chinese Acad Sci, Key Lab Photochem Convers & Optoelect Mat, Tech Inst Phys & Chem, Beijing 100190, Peoples R China

Reprint Author's Address:

  • [Guan, Baolu]Beijing Univ Technol, Coll Elect Sci & Technol, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China

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Source :

ADVANCED OPTICAL MATERIALS

ISSN: 2195-1071

Year: 2024

Issue: 12

Volume: 12

9 . 0 0 0

JCR@2022

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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