The　purpose　of　this　paper　is　to　discuss　the　electrical　characteristics　variations　of　a　650V　trench-type　SiC　MOSFET　with　low　on-resistance　and　high　switching　speed　under　different　filling　and　testing　conditions.　The　experimental　results　indicate　that　more　accurate　and　stable　electrical　parameters　can　be　obtained　after　a　certain　period　of　gate　filling.　Trap　activation　energy　is　characterized　using　transient　current　methods,　and　the　gate　traps　are　located.　In　addition,　different　pulse　stresses　were　applied　to　the　device　gate　to　characterize　the　effects　of　different　stress　conditions　on　threshold　voltage　changes　and　trap　evolution.　©2024　IEEE.