The　trapping　behaviors　in　the　carbon　nanotube　field-effect　transistor　(CNTFET)　pose　a　major　challenge　to　the　operation　stability.　Herein,　a　trap　characterization　system　based　on　the　transient　drain　current　is　constructed　to　realize　the　comprehensive　measurement　and　analysis　of　trap　levels　in　the　CNTFET　with　SiO2　as　the　gate　oxide.　A　Bayesian　deconvolution　function　is　developed　to　optimize　the　trap　extraction　accuracy　based　on　the　measured　transient　current,　and　three　electron　traps　and　three　hole　traps　are　identified　under　the　positive　and　negative　gate　stress,　respectively.　Leveraging　this　model,　a　comprehensive　experimental　and　theoretical　analysis　of　the　trap　information,　including　the　time　constant,　exact　amplitude,　and　energy　levels,　can　be　conducted.　In　particular,　the　charge　trapping　mechanisms　under　different　gate　and　drain　biases　are　studied　based　on　the　dependence　of　trap　amplitudes　on　filling　voltages.　Through　these　advances,　we　analyze　the　physical　origin　and　specific　location　of　each　trap　and　compare　the　trap　properties　against　a　wide　range　of　trap　levels　reported　in　previous　studies.　The　approach　used　in　this　study　can　be　potentially　beneficial　to　better　understand　the　trap　levels　responsible　for　the　hysteresis　issues　and　optimize　the　performance　and　reliability　of　the　CNTFET.　©　1963-2012　IEEE.