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Author:

He, Xin (He, Xin.) | Zhang, Yamin (Zhang, Yamin.) | Feng, Shiwei (Feng, Shiwei.) (Scholars:冯士维) | Yu, Wenjuan (Yu, Wenjuan.) | Yang, Manpo (Yang, Manpo.)

Indexed by:

EI Scopus SCIE

Abstract:

Multistage depressed collectors (MDCs) of traveling-wave tubes (TWTs) are used to collect kinetic power of a spent electron beam, recover part of this power to a useful electric power, and, by such a way, enhance the overall efficiency of TWTs. The heat-dissipation performance of MDCs is crucial. This brief presents a method for measuring the heat-dissipation characteristics of an MDC using an external heat source and a heat monitor. This method uses thermal transient testing techniques to measure the thermal contact resistance (TCR) of MDC. A heat source is designed to measure the characteristics of the MDC, and a SiC Schottky barrier diode is used as a heat monitor to detect the temperature changes in real time. The results show that the method is effective to measure the thermal characteristics of the MDC.

Keyword:

Temperature measurement Resistance heating Thermal resistance simulated heat source Metals Heat-dissipation performance thermal contact resistance (TCR) Electrical resistance measurement multistage depressed collectors (MDCs)

Author Community:

  • [ 1 ] [He, Xin]Beijing Univ Technol, Novel Microelect Devices & Reliabil Lab, Beijing 100124, Peoples R China
  • [ 2 ] [Zhang, Yamin]Beijing Univ Technol, Novel Microelect Devices & Reliabil Lab, Beijing 100124, Peoples R China
  • [ 3 ] [Feng, Shiwei]Beijing Univ Technol, Novel Microelect Devices & Reliabil Lab, Beijing 100124, Peoples R China
  • [ 4 ] [Yu, Wenjuan]Beijing Univ Technol, Novel Microelect Devices & Reliabil Lab, Beijing 100124, Peoples R China
  • [ 5 ] [Yang, Manpo]Beijing Univ Technol, Novel Microelect Devices & Reliabil Lab, Beijing 100124, Peoples R China

Reprint Author's Address:

  • 冯士维

    [Feng, Shiwei]Beijing Univ Technol, Novel Microelect Devices & Reliabil Lab, Beijing 100124, Peoples R China

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Source :

IEEE TRANSACTIONS ON ELECTRON DEVICES

ISSN: 0018-9383

Year: 2019

Issue: 12

Volume: 66

Page: 5404-5406

3 . 1 0 0

JCR@2022

ESI Discipline: ENGINEERING;

ESI HC Threshold:136

JCR Journal Grade:2

Cited Count:

WoS CC Cited Count: 5

SCOPUS Cited Count: 4

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 9

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