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Author:

Sun, Weigao (Sun, Weigao.) | Ji, Lingfei (Ji, Lingfei.) | Lin, Zhenyuan (Lin, Zhenyuan.)

Indexed by:

EI Scopus SCIE

Abstract:

Laser-induced plasma during the laser lift-off (LLO) process has complex dynamic driving evolution behaviour, presenting a challenge in achieving non-destructive mu -LED transfer. This study systematically explores the mechanism of homogeneous mechanical effect by confined plasma superfluid reflection for lossless mu -LEDs transfer. The stress field distribution of mu -LEDs subjected to the transfer process is simulated from the transferred mu -LED crack morphology, confirming that the non-uniform stress concentration points caused by the plasma evolution process are the main cause of mu -LED breakage. The confined plasma is modelled using the Fock-Plank electron density theory combined with the electrostatic sphere shell model and real-time ICCD imaging, resulting in the characteristic law of the plasma in a confined region over time. The results show that the plasma expansion velocity and the geometry of the interface cavity can be synchronously adjusted by modulating the laser irradiation behaviour, thus realizing its critical Mach number to achieve the plasma conversion from regular reflection to Mach reflection. Based on modulating of superfluid reflection effect, the plasma stress field is effectively homogenized, inducing a damage-free transfer of mu -LEDs. This study provides a novel understanding of plasma dynamics in the picosecond laser transfer process and lays the groundwork for achieving high-quality, non-destructive mu -LED transfers.

Keyword:

Laser transfer Picosecond laser Plasma Micro-LED

Author Community:

  • [ 1 ] [Sun, Weigao]Beijing Univ Technol, Sch Phys & Optoelect Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Ji, Lingfei]Beijing Univ Technol, Sch Phys & Optoelect Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Lin, Zhenyuan]Beijing Univ Technol, Sch Phys & Optoelect Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Sun, Weigao]Minist Educ, Key Lab Transscale Laser Mfg Technol, Beijing 100124, Peoples R China
  • [ 5 ] [Ji, Lingfei]Minist Educ, Key Lab Transscale Laser Mfg Technol, Beijing 100124, Peoples R China
  • [ 6 ] [Lin, Zhenyuan]Minist Educ, Key Lab Transscale Laser Mfg Technol, Beijing 100124, Peoples R China
  • [ 7 ] [Sun, Weigao]Beijing Engn Res Ctr Laser Appl Technol, Beijing 100124, Peoples R China
  • [ 8 ] [Ji, Lingfei]Beijing Engn Res Ctr Laser Appl Technol, Beijing 100124, Peoples R China
  • [ 9 ] [Lin, Zhenyuan]Beijing Engn Res Ctr Laser Appl Technol, Beijing 100124, Peoples R China

Reprint Author's Address:

  • [Ji, Lingfei]Beijing Univ Technol, Sch Phys & Optoelect Engn, Beijing 100124, Peoples R China;;[Ji, Lingfei]Minist Educ, Key Lab Transscale Laser Mfg Technol, Beijing 100124, Peoples R China;;[Ji, Lingfei]Beijing Engn Res Ctr Laser Appl Technol, Beijing 100124, Peoples R China

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Source :

APPLIED SURFACE SCIENCE

ISSN: 0169-4332

Year: 2025

Volume: 690

6 . 7 0 0

JCR@2022

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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