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Author:

Sun, Weigao (Sun, Weigao.) | Wang, Guanqiang (Wang, Guanqiang.) | Ji, Lingfei (Ji, Lingfei.) (Scholars:季凌飞) | Lin, Zhenyuan (Lin, Zhenyuan.)

Indexed by:

EI Scopus SCIE

Abstract:

Ultrafast laser lift-off is an important step in manufacturing flexible electronic display devices. To improve the picosecond laser lift-off transfer quality of micro light emitting diodes (micro-LEDs), the response surface methodology (RSM) is employed for the optimization of multiple laser processing parameters, including laser power, scanning speed, spot diameter, and scanning distance. Transfer yield and residual stress are chosen as the performance evaluation metrics, as well as the lifted-off device element composition and transfer quality under different process parameters are characterized. The optimized maximum transfer yield is 95.84% and the minimum residual tensile stress is 0.589 GPa, which is less than 0.5% prediction error of the optimum transfer yield (95.67-95.74%) and residual stress (0.588-0.592 GPa) for ultrafast laser lift-off of micro-LEDs based on the central composite design of RSM, indicating the reliable guidance ability of this model. It develops a new way for quality improvement of the ultrafast laser lift-off process for micro-LEDs.

Keyword:

micro-LED Ultrafast laser laser transfer response surface methodology

Author Community:

  • [ 1 ] [Sun, Weigao]Beijing Univ Technol, Sch Phys & Optoelect Engn, Beijing, Peoples R China
  • [ 2 ] [Wang, Guanqiang]Beijing Univ Technol, Sch Phys & Optoelect Engn, Beijing, Peoples R China
  • [ 3 ] [Ji, Lingfei]Beijing Univ Technol, Sch Phys & Optoelect Engn, Beijing, Peoples R China
  • [ 4 ] [Lin, Zhenyuan]Beijing Univ Technol, Sch Phys & Optoelect Engn, Beijing, Peoples R China
  • [ 5 ] [Sun, Weigao]Beijing Univ Technol, Key Lab Transscale Laser Mfg Technol, Minist Educ, Beijing, Peoples R China
  • [ 6 ] [Wang, Guanqiang]Beijing Univ Technol, Key Lab Transscale Laser Mfg Technol, Minist Educ, Beijing, Peoples R China
  • [ 7 ] [Ji, Lingfei]Beijing Univ Technol, Key Lab Transscale Laser Mfg Technol, Minist Educ, Beijing, Peoples R China
  • [ 8 ] [Lin, Zhenyuan]Beijing Univ Technol, Key Lab Transscale Laser Mfg Technol, Minist Educ, Beijing, Peoples R China
  • [ 9 ] [Sun, Weigao]Beijing Engn Res Ctr Laser Appl Technol, Beijing, Peoples R China
  • [ 10 ] [Wang, Guanqiang]Beijing Engn Res Ctr Laser Appl Technol, Beijing, Peoples R China
  • [ 11 ] [Ji, Lingfei]Beijing Engn Res Ctr Laser Appl Technol, Beijing, Peoples R China
  • [ 12 ] [Lin, Zhenyuan]Beijing Engn Res Ctr Laser Appl Technol, Beijing, Peoples R China

Reprint Author's Address:

  • 季凌飞

    [Ji, Lingfei]Beijing Univ Technol, Inst Laser Engn, Sch Phys & Optoelect Engn, Beijing 100124, Peoples R China

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Source :

MATERIALS AND MANUFACTURING PROCESSES

ISSN: 1042-6914

Year: 2024

Issue: 4

Volume: 40

Page: 567-578

4 . 8 0 0

JCR@2022

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 6

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