Traditional　top-emitting　vertical-cavity　surface-emitting　lasers　(VCSELs)　exhibit　a　long　distance　between　the　source　region　and　heat　sink,　and　internal　heat　conduction　of　the　device　is　difficult,　resulting　in　limited　output　power　of　both　single-tube　and　array　devices.　To　address　these　limitations,　this　study　proposes　a　top-emitting　VCSEL　with　a　heat　dissipation　hole　on　the　substrate.　This　hole　is　located　directly　below　the　countertop　and　is　filled　with　high-thermal-conductivity　materials,　enabling　rapid　heat　transfer　from　within　the　device.　This　design　ensures　mechanical　support　for　the　entire　structure　while　improving　the　heat　dissipation　capacity.　Simulation　results　indicate　that　the　thermal　flip　power　of　the　VCSEL　device　with　a　heat　dissipation　hole　is　9.　54　mW,　representing　a　36.　4%　increase　compared　to　VCSEL　devices　without　a　heat　dissipation　hole.　VCSEL　devices　with　an　oxidation　aperture　of　12　μm　are　prepared　and　tested　under　a　duty　cycle　of　0.　6%.　The　peak　power　of　the　VCSEL　with　a　heat　dissipation　hole　reaches　9.　59　mW,　which　is　31%　higher　than　that　of　the　VCSEL　without　a　heat　dissipation　hole.　©　2025　Universitat　zu　Koln.　All　rights　reserved.