Indexed by：
Abstract：
A sulfur-passivation technique for facet of 808 nm laser diodes (LD) has been investigated. The treatment of facet of LD can improve the output characteristics and reliability. Output power increases by 16.7%. LD passivated using (NH4)2S gives no evidence of degradation after 1500 hours of aging experiment. LD of non-sulfur-passivation severely degrades, its output power decreases by 36.8%. The time of sulfur-passivation produces great difference on the passivation result of LD. The experiment indicates that long time passivation can damage facet causing degradation of LD. 5 min sulfur-passivation is best.
Keyword：
Reprint Author's Address：
Email：
Source ：
Research and Progress of Solid State Electronics
ISSN： 1000-3819
Year： 2006
Issue： 2
Volume： 26
Page： 201-204
Cited Count：
WoS CC Cited Count： 0
SCOPUS Cited Count：
ESI Highly Cited Papers on the List： 0 Unfold All
WanFang Cited Count：
Chinese Cited Count：
30 Days PV： 1
Affiliated Colleges：
