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Abstract：
The heating response curves of temperature rise and thermal resistance of semiconductor power emitting-lighting diodes are obtained according to electrical methods. The curve shows one or more sidesteps to reflect device＇s inside thermal resistance constitution and physical structure. The temperature rise and thermal resistance are amended with a covering method. A transient heating response theory is also used to inspect the package structure of the devices.
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Chinese Journal of Semiconductors
ISSN： 0253-4177
Year： 2006
Issue： 2
Volume： 27
Page： 350-353
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SCOPUS Cited Count：
ESI Highly Cited Papers on the List： 0 Unfold All
WanFang Cited Count：
Chinese Cited Count：
30 Days PV： 8
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