The　Ohmic　contact　and　photoresponse　of　a　ZnO　single　crystal　film　produced　by　MOCVD　are　investigated.　The　electrical　and　photoresponsive　changes　in　the　ZnO　film　due　to　the　RF　sputter　deposition　of　SiO2　(antireflective　coating)　are　also　discussed.　A　nonalloyed　Al/Au　metallization　scheme　forms　a　good　Ohmic　contact　on　the　n-type　ZnO.　RF　sputter　deposition　of　SiO2　induces　defects　which　behave　as　carrier　traps　and　prolongs　response　time.　The　photoresponse　of　the　ZnO　epitaxial　film　deteriorates　with　time.