Kinetics of growth of AlAs/AlGaAs oxide in cylindrical mesa - Details

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Abstract：

Wet　oxidation　of　AlAs/AlGaAs　is　an　important　step　in　the　process　of　the　oxide-confined　vertical　cavity　surface　emitting　lasers　(VCSELs).　The　kinetics　of　Al0.98Ga0.02As　wet　oxidation　process　are　investigated　in　cylindrically　symmetric　mesa　structure.　We　compare　and　analyze　the　rule　relation　between　the　stripe,　convex　and　concave　mesa,　and　obtain　a　novel　model　which　suits　2D　cylindrical　structure.　The　simulated　data　using　the　novel　formulation　is　in　close　agreement　with　the　experiment　data.

Keyword：

Oxidation Cylinders (shapes) Semiconductor lasers Semiconducting aluminum compounds Oxides Structures (built objects) Mathematical models Two dimensional Kinetic theory

Author Community：

[ 1 ] [Dong, Limin]Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Engineering, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Guo, Xia]Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Engineering, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Qu, Hongwei]Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Engineering, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Deng, Jun]Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Engineering, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Du, Jinyu]Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Engineering, Beijing University of Technology, Beijing 100022, China
[ 6 ] [Zou, Deshu]Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Engineering, Beijing University of Technology, Beijing 100022, China
[ 7 ] [Shen, Guangdi]Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Engineering, Beijing University of Technology, Beijing 100022, China

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Related Keywords：

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Source ：

Chinese Journal of Semiconductors

ISSN： 0253-4177

Year： 2005

Issue： SUPPL.

Volume： 26

Page： 281-284

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 4

Affiliated Colleges：

信息科学技术学院本学院/部未明确归属的数据

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