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Author:

Liu, Qiaoli (Liu, Qiaoli.) | Tian, Huijun (Tian, Huijun.) | Li, Jingwei (Li, Jingwei.) | Hu, Anqi (Hu, Anqi.) | He, Xiaoying (He, Xiaoying.) | Sui, Mauling (Sui, Mauling.) | Guo, Xia (Guo, Xia.)

Indexed by:

EI Scopus SCIE

Abstract:

Flexible high-sensitivity photodetectors are desirable for use in future wearable optoelectronics. Graphene is attracting considerable attention because of its outstanding electrical, optical, and mechanical properties, which make graphene appealing in flexible optoelectronics and photodetection applications. In this paper, an internal current gain mechanism is proposed based on a 2D/0D photodetection system. The carrier density in the 2D material can be amplified via Fermi level modulation when a 0D quantum dot absorbs photons. An ultrahigh responsivity of more than 10(10) A W-1 and fW-scale light detectivity are achieved at room temperature using the flexible transfer-free hybrid graphene/Cu2O quantum dot photodetector developed in this work. After excessive bending, the responsivity of the photodetector still reaches 10(6) A W-1, thus demonstrating the promising flexibility of the device.

Keyword:

graphene Cu2O quantum dots ultrahigh responsivity gain mechanism photodetectors

Author Community:

  • [ 1 ] [Liu, Qiaoli]Beijing Univ Posts & Telecommun, Sch Elect Engn, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
  • [ 2 ] [Hu, Anqi]Beijing Univ Posts & Telecommun, Sch Elect Engn, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
  • [ 3 ] [He, Xiaoying]Beijing Univ Posts & Telecommun, Sch Elect Engn, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
  • [ 4 ] [Guo, Xia]Beijing Univ Posts & Telecommun, Sch Elect Engn, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
  • [ 5 ] [Liu, Qiaoli]Beijing Univ Technol, Sch Informat, Beijing 100124, Peoples R China
  • [ 6 ] [Tian, Huijun]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China
  • [ 7 ] [Li, Jingwei]Beijing Univ Technol, Beijing Key Lab Microstruct & Property Adv Mat, Inst Microstruct & Properties Adv Mat, Beijing 100124, Peoples R China
  • [ 8 ] [Sui, Mauling]Beijing Univ Technol, Beijing Key Lab Microstruct & Property Adv Mat, Inst Microstruct & Properties Adv Mat, Beijing 100124, Peoples R China

Reprint Author's Address:

  • 郭霞

    [Guo, Xia]Beijing Univ Posts & Telecommun, Sch Elect Engn, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China;;[Sui, Mauling]Beijing Univ Technol, Beijing Key Lab Microstruct & Property Adv Mat, Inst Microstruct & Properties Adv Mat, Beijing 100124, Peoples R China

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Source :

ADVANCED OPTICAL MATERIALS

ISSN: 2195-1071

Year: 2019

Issue: 20

Volume: 7

9 . 0 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:211

JCR Journal Grade:1

Cited Count:

WoS CC Cited Count: 37

SCOPUS Cited Count: 34

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 7

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