Tantalum　pentoxide　(Ta2O5)　films　with　high　〈001〉　orientation　have　exceptionally　high　dielectric　constant.　Usually,　oriented　Ta2O5　films　were　fabricated　by　post-annealing.　In　this　paper,　as-deposited　Ta2O5　films　with　high　〈001〉　orientation　were　sputtered　at　low　temperature　with　substrate　bias.　The　orientation　of　the　films　is　modified　to　be　better　with　the　bias　being　increased.　The　bias　effect　on　the　orientation　of　the　films　is　discussed　in　details.　©　2003　Elsevier　Science　B.V.　All　rights　reserved.