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Author:

Li, Ming (Li, Ming.) | Wang, Qiuhua (Wang, Qiuhua.) | He, Yiming (He, Yiming.) | Zhao, Wu (Zhao, Wu.) | Qiu, Pingping (Qiu, Pingping.) | Xie, Yiyang (Xie, Yiyang.) | Kan, Qiang (Kan, Qiang.)

Indexed by:

EI

Abstract:

A direct-etched surface grating scheme is demonstrated to achieve the high orthogonal polarization suppression ratio (OPSR) of a vertical cavity surface emitting laser. A preliminary result of 27 dB OPSR is obtained. Asia Communications and Photonics Conference (ACP) © OSA 2019 © 2019 The Author(s)

Keyword:

Polarization Surface emitting lasers Laser pulses Photonics

Author Community:

  • [ 1 ] [Li, Ming]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing; 100083, China
  • [ 2 ] [Wang, Qiuhua]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing; 100124, China
  • [ 3 ] [He, Yiming]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing; 100083, China
  • [ 4 ] [Zhao, Wu]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing; 100083, China
  • [ 5 ] [Qiu, Pingping]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing; 100083, China
  • [ 6 ] [Xie, Yiyang]Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing; 100124, China
  • [ 7 ] [Kan, Qiang]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing; 100083, China

Reprint Author's Address:

  • [kan, qiang]key laboratory of semiconductor materials science, institute of semiconductors, chinese academy of sciences, college of materials science and opto-electronic technology, university of chinese academy of sciences, beijing key laboratory of low dimensional semiconductor materials and devices, beijing; 100083, china

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Source :

Year: 2019

Volume: Part F138-ACPC 2019

Language: English

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 9

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