Thermal　characteristics　of　AlGaInP　thin-film　LED　with　transparent　conducting　ITO　p-type　contact　by　electrical　method　are　presented　and　discussed.　Samples　without　ITO　fabricated　from　the　same　AlGaInP/GaAs　epitaxial　material　are　also　prepared　as　references.　The　temperature　coefficients　of　the　samples　are　measured　firstly　and　they　are　used　as　temperature　sensitive　parameters　to　determine　the　temperature　rise.　Heating　response　curves　show　that　the　temperature　of　chip　in　the　sample　with　ITO　is　about　9K　lower　than　the　sample　without　ITO　when　the　time　of　applying　60mA　operation　current　exceeds　10　5μs.　It　can　be　also　calculated　that　thermal　resistance(from　chip　to　ambient　condition)　of　the　sample　with　ITO　is　about　40K/W　lower　than　the　one　without　ITO.　Finally　we　make　the　conclusion　that　the　ITO　layer　is　helpful　for　the　thermal　management　of　LED　and　it　can　improve　the　reliability　the　AlGaInP　thin-film　LED　effectively.　©　2011　IEEE.