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Author:

Azam, Muhammad (Azam, Muhammad.) | Liu, Kong (Liu, Kong.) | Yue, Shizhong (Yue, Shizhong.) | Sun, Yang (Sun, Yang.) | Zhang, Dongyang (Zhang, Dongyang.) | Hassan, Ali (Hassan, Ali.) | Wang, Zhijie (Wang, Zhijie.) | Zhou, Huiqiong (Zhou, Huiqiong.) | Qu, Shengchun (Qu, Shengchun.) | Wang, Zhanguo (Wang, Zhanguo.)

Indexed by:

SCIE

Abstract:

The additive engineering to hybrid organic-inorganic perovskite precursors is an effective technique toward highly efficient stable photovoltaic devices, however, there is still a deficiency in fundamental understanding on how these additives affect the perovskite film and device performance as well. Herein is introduced a small organic molecule, DRCN5T, into a double-cation perovskite precursor and the function on device performance is systematically investigated. An appropriate amount of DRCN5T into the precursor can promote the crystallization of film with successful suppression of delta-FAPbI(3) phase, reduce grain boundaries and adequately passivate the native defect sites. In addition, the incorporation of DRCN5T also regulates the energy level alignment of the perovskite to charge transport layer suitably. This leads to the promotion of charge transport, reduction in non-radiative recombination, and boosts the efficiency to a value of 20.60% with greatly reduced hysteresis in the device. Moreover, the treatment by DRCN5T also significantly increases the stability of the devices in ambient environment. These findings open the gate to produce highly crystallized perovskite/organic-molecule active layers toward commercialization of perovskite solar cells.

Keyword:

passivation crystallization defect states perovskites small molecules

Author Community:

  • [ 1 ] [Azam, Muhammad]Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 2 ] [Liu, Kong]Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 3 ] [Yue, Shizhong]Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 4 ] [Sun, Yang]Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 5 ] [Wang, Zhijie]Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 6 ] [Qu, Shengchun]Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 7 ] [Wang, Zhanguo]Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 8 ] [Azam, Muhammad]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 9 ] [Liu, Kong]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 10 ] [Yue, Shizhong]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 11 ] [Sun, Yang]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 12 ] [Wang, Zhijie]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 13 ] [Qu, Shengchun]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 14 ] [Wang, Zhanguo]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 15 ] [Zhang, Dongyang]Natl Ctr Nanosci & Technol, CAS Ctr Excellence Nanosci, CAS Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China
  • [ 16 ] [Zhou, Huiqiong]Natl Ctr Nanosci & Technol, CAS Ctr Excellence Nanosci, CAS Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China
  • [ 17 ] [Hassan, Ali]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China

Reprint Author's Address:

  • [Wang, Zhijie]Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China;;[Qu, Shengchun]Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China;;[Wang, Zhijie]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China;;[Qu, Shengchun]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China;;[Zhou, Huiqiong]Natl Ctr Nanosci & Technol, CAS Ctr Excellence Nanosci, CAS Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China

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Source :

SOLAR RRL

ISSN: 2367-198X

Year: 2019

Issue: 3

Volume: 3

7 . 9 0 0

JCR@2022

JCR Journal Grade:1

Cited Count:

WoS CC Cited Count: 24

SCOPUS Cited Count: 22

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 4

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