Temperature characteristics of the red resonant cavity light emitting diodes - Details

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Abstract：

In　this　paper,　InGaP/AlGaInP　640nm　Resonant-Cavity　light-emitting　diodes　(RCLEDs)　with　stable　temperature　characteristics　have　been　achieved　and　compared　them　with　630nm　InGaP/AlGaInP　red　light-emitting　diodes　which　don＇t　include　the　top　and　bottom　DBRs.　We　mainly　focus　on　the　temperature　characteristics　of　these　two　kinds　of　devices　as　operation　temperature　increasing.　When　the　operation　temperature　increases　from　10　to　47.5,　the　optical　and　electrical　characteristics　variations　of　RCLEDs　at　20mA　is　changed　more　subtly.　The　red　shift　of　RCLEDs　is　2nm,　while　the　red　LEDs＇　is　4nm.　The　light　efficiency　degrades　less　severely.　According　to　the　experimental　results,　we　confirm　that　the　temperature　characteristics　of　RCLEDs　are　more　insensitive.　In　order　to　interpret　the　temperature　dependent　experimental　results,　theoretical　analysis　is　further　carried　to　investigate　the　physical　mechanism.

Keyword：

Red Shift Cavity resonators Light emitting diodes Diodes Gallium compounds

Author Community：

[ 1 ] [Ya, Xuan]Key Laboratory of Opto-electronics Technology, Beijing University of Technology, Beijing, China
[ 2 ] [Li, Jianjun]Key Laboratory of Opto-electronics Technology, Beijing University of Technology, Beijing, China
[ 3 ] [Chen, Rui]Key Laboratory of Opto-electronics Technology, Beijing University of Technology, Beijing, China
[ 4 ] [Chen, Yixin]Key Laboratory of Opto-electronics Technology, Beijing University of Technology, Beijing, China
[ 5 ] [Zou, Deshu]Key Laboratory of Opto-electronics Technology, Beijing University of Technology, Beijing, China
[ 6 ] [Shen, Guangdi]Key Laboratory of Opto-electronics Technology, Beijing University of Technology, Beijing, China