A　novel　multi-finger　power　SiGe　heterojunction　bipolar　transistor　(HBT)　with　non-uniform　finger　length　and　non-uniform　finger　spacing　was　proposed　to　improve　the　thermal　stability.　Thermal　simulation　for　a　ten-finger　power　SiGe　HBT　with　novel　structure　was　conducted　with　ANSYS　software.　Three-dimensional　temperature　distribution　on　emitter　fingers　was　obtained.　Compared　with　traditional　structure　power　SiGe　HBT,　the　maximum　junction　temperature　of　novel　structure　reduce　significantly　from　416.1K　to　412K,　the　thermal　resistance　reduce　from　154.8K/W　to　149K/W,　temperature　distribution　were　significantly　improved.　Thermal　stability　was　effective　enhanced.　©2010　IEEE.