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Author:

Sun, Shuting (Sun, Shuting.) | Liu, Yangzhen (Liu, Yangzhen.) | Fu, Hanguang (Fu, Hanguang.) (Scholars:符寒光) | Guo, Xingye (Guo, Xingye.) | Ma, Shengqiang (Ma, Shengqiang.) | Lin, Jian (Lin, Jian.) | Guo, Gencai (Guo, Gencai.) | Lei, Yongping (Lei, Yongping.) (Scholars:雷永平) | Wang, Ruzhi (Wang, Ruzhi.) (Scholars:王如志)

Indexed by:

EI Scopus SCIE

Abstract:

The mechanical properties and electronic structures of TiC and TiN with different doping ratio of vanadium (V) are studied in this work using the first principles calculations. The simulation results show that Ti1-xVxN has lower formation energy than Ti1-xVxC, suggesting higher chemical stability of Ti1-xVxN. Ti0.25V0.75C and TiN show larger hardness than other Ti1-xVxC and Ti1-xVxN compounds. The anisotropic Young's modulus of Ti1-xVxC and Ti1-xVxN models are plotted in 3D surface constructions, and VN exhibited the strongest anisotropy. The uniaxial tensile simulation of Ti1-xVxC and Ti1-xVxN are conducted along [111] direction. The tensile strength of Ti1-xVxN is stronger than Ti1-xVxC. The tensile strength increases with the increasing of V-doping ratio. Furthermore, the electronic structures of Ti1-xVxC and Ti1-xVxN are estimated. The modeling techniques used in this work and the calculation results are helpful for systematically understanding the properties of Ti1-xVxC and Ti1-xVxN in nanoscale.

Keyword:

anisotropic Young's modulus mechanical properties Ti1-xVxC Ti1-xVxN first principles calculations

Author Community:

  • [ 1 ] [Sun, Shuting]Beijing Univ Technol, Sch Mat Sci & Engn, 100 Pingle Garden, Beijing 100124, Peoples R China
  • [ 2 ] [Fu, Hanguang]Beijing Univ Technol, Sch Mat Sci & Engn, 100 Pingle Garden, Beijing 100124, Peoples R China
  • [ 3 ] [Guo, Xingye]Beijing Univ Technol, Sch Mat Sci & Engn, 100 Pingle Garden, Beijing 100124, Peoples R China
  • [ 4 ] [Lin, Jian]Beijing Univ Technol, Sch Mat Sci & Engn, 100 Pingle Garden, Beijing 100124, Peoples R China
  • [ 5 ] [Guo, Gencai]Beijing Univ Technol, Sch Mat Sci & Engn, 100 Pingle Garden, Beijing 100124, Peoples R China
  • [ 6 ] [Lei, Yongping]Beijing Univ Technol, Sch Mat Sci & Engn, 100 Pingle Garden, Beijing 100124, Peoples R China
  • [ 7 ] [Wang, Ruzhi]Beijing Univ Technol, Sch Mat Sci & Engn, 100 Pingle Garden, Beijing 100124, Peoples R China
  • [ 8 ] [Liu, Yangzhen]Xi An Jiao Tong Univ, Sch Mat Sci & Engn, Xian 710049, Shaanxi, Peoples R China
  • [ 9 ] [Ma, Shengqiang]Xi An Jiao Tong Univ, Sch Mat Sci & Engn, Xian 710049, Shaanxi, Peoples R China
  • [ 10 ] [Ma, Shengqiang]Virginia Tech, Dept Mech Engn, Blacksburg, VA 24061 USA

Reprint Author's Address:

  • 符寒光 王如志

    [Fu, Hanguang]Beijing Univ Technol, Sch Mat Sci & Engn, 100 Pingle Garden, Beijing 100124, Peoples R China;;[Wang, Ruzhi]Beijing Univ Technol, Sch Mat Sci & Engn, 100 Pingle Garden, Beijing 100124, Peoples R China

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Source :

ADVANCED ENGINEERING MATERIALS

ISSN: 1438-1656

Year: 2018

Issue: 10

Volume: 20

3 . 6 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:260

Cited Count:

WoS CC Cited Count: 14

SCOPUS Cited Count: 15

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

Online/Total:215/10641819
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