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Author:

Hao, Shan-Peng (Hao, Shan-Peng.) | Wang, Yi (Wang, Yi.) | Suo, Hong-Li (Suo, Hong-Li.) (Scholars:索红莉) | Jia, Qiang (Jia, Qiang.) | Liu, Min (Liu, Min.) | Ma, Lin (Ma, Lin.)

Indexed by:

EI Scopus SCIE CSCD

Abstract:

Preparation of the second-generation high-temperature superconducting tape by ion beam-assisted deposition (IBAD) requires a flat metal substrate. In this work, the electrochemical polishing of long-length Hastelloy C-276 alloy was studied, and its process parameters, characterized roughness and other properties were investigated. A 10-meter-long Hastelloy C-276 alloy was prepared by electrochemical polishing. The following optimized processing parameters are obtained: temperature of 45 A degrees C, current density of 0.439 A center dot cm(-2) and polishing time of 60 s. The average roughness value (R (a)) of the surface is less than 5 nm (5 mu m x 5 mu m), which was characterized by atomic force microscopy. This value satisfies the requirements for the further preparation of transition-layer pair by the IBAD technology route.

Keyword:

Hastelloy C-276 alloy Current density Atomic force microscopy Electrochemical polishing

Author Community:

  • [ 1 ] [Hao, Shan-Peng]Beijing Univ Technol, Sch Mat Sci & Engn, Beijing 100022, Peoples R China
  • [ 2 ] [Wang, Yi]Beijing Univ Technol, Sch Mat Sci & Engn, Beijing 100022, Peoples R China
  • [ 3 ] [Suo, Hong-Li]Beijing Univ Technol, Sch Mat Sci & Engn, Beijing 100022, Peoples R China
  • [ 4 ] [Jia, Qiang]Beijing Univ Technol, Sch Mat Sci & Engn, Beijing 100022, Peoples R China
  • [ 5 ] [Liu, Min]Beijing Univ Technol, Sch Mat Sci & Engn, Beijing 100022, Peoples R China
  • [ 6 ] [Ma, Lin]Beijing Univ Technol, Sch Mat Sci & Engn, Beijing 100022, Peoples R China

Reprint Author's Address:

  • 索红莉

    [Suo, Hong-Li]Beijing Univ Technol, Sch Mat Sci & Engn, Beijing 100022, Peoples R China

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RARE METALS

ISSN: 1001-0521

Year: 2018

Issue: 9

Volume: 37

Page: 795-802

8 . 8 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:260

JCR Journal Grade:3

Cited Count:

WoS CC Cited Count: 5

SCOPUS Cited Count: 5

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 4

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